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d a t a sh eet preliminary speci?cation file under integrated circuits, ic01 july 1994 integrated circuits TEA6850 if filter / amplifier / demodulator for fm radio receivers
july 1994 2 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 features improved dynamic selectivity and sensitivity because of tunable if filter fully integrated, frequency matched fm demodulator high linearity unweighted level detector output soft mute mpx output for rds and diversity internal source selector. general description the TEA6850 is a monolithic bipolar integrated circuit for if filtering, fm demodulation and level detection. using if filters tuned by the demodulated signal, dynamic selectivity and sensitivity are improved. quick reference data ordering information note 1. sot307-2; 1996 august 26. symbol parameter min. typ. max. unit v p supply voltage (pin 7) 7 8.5 10 v i p supply current (pin 7) 14 17.5 21 ma ds200 dynamic selectivity for 200 khz 22 27 - db distance (emf = 700 m v; ?lter bandwidth = 50 khz) s/n signal-to-noise ratio 61 67 - db ( d f = 22.5 khz; f m = 1 khz) thd total harmonic distortion - 0.3 0.5 % ( d f = 75 khz; f m = 1 khz) v o af output signal at pin 4 180 200 220 mv (rms value) t amb operating ambient temperature - 40 -+ 85 c extended type number package pins pin position material code TEA6850h 44 qfp plastic sot307 (1)
july 1994 3 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here in this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force land scape pages to be ... fig.1 diagram for adaptive application.
july 1994 4 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 fig.2 TEA6850h (adaptive version), printed- circuit board.
july 1994 5 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 pinning symbol pin description rds out 1 output for rds cenable 2 chip enable mpx in 3 external audio frequency input (mpx signal) mpx 4 audio frequency output (mpx signal) lvlunw 5 unweighted level output mpxsel 6 source selector for mpx signal v p 7 supply voltage (8.5 v) gnd 8 ground (0 v) v gap 9 internal reference voltage v ut2 10 reference voltage output v ut1 11 reference voltage output ifadj 12 input for if ?lter frequency adjustment bwadj 13 input for if ?lter bandwidth adjustment if in 14 if signal input 1 if ini 15 if signal input 2 gainadj 16 input for mixer gain adjustment n.c. 17 not connected crystal 18 crystal oscillator input gnd 19 oscillator ground n.c. 20 not connected out300i 21 if ?lter output (0 ) out300q 22 if ?lter output (90 ) clim1i 23 if limiter feedback 1 clim2i 24 if limiter feedback 2 clim3i 25 if limiter feedback 3 clim4i 26 if limiter feedback 4 clim1q 27 if limiter feedback 5 clim2q 28 if limiter feedback 6 clim3q 29 if limiter feedback 7 clim4q 30 if limiter feedback 8 lvladj 31 input for level adjustment lvlwei 32 weighted level output ihp60 33 input for high-pass - 3 db adjustment chpmute 34 output of recti?ed high-pass signal cmute 35 mute input demoloop1 36 demodulator output 1 demoloop2 37 demodulator output 2 cop2 38 mpx correction output 2 con2 39 mpx correction input 2 coo1 40 mpx correction output 1
july 1994 6 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 con1 41 mpx correction input 1 ifloop1 42 if loop ?lter output 1 ifloop2 43 if loop ?lter output 2 ifloop3 44 if loop ?lter output 3 symbol pin description fig.3 pin configuration.
july 1994 7 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 functional description the first mixer stage at the input of the circuit is for mixing the 10.7 mhz if signal to 300 khz. the if filter has a resonance frequency of 300 khz (adjustable), tunable from 50 khz to 500 khz, and a bandwidth of about 20 khz to 80 khz tunable. static filter response see fig.5. the limiter has a gain of approximately 90 db, which is virtually independent from temperature change. the demodulator is frequency matched with the if filter. limiting values in accordance with the absolute maximum rating system (iec 134). note to the limiting values 1. charge device model class b: equivalent to discharging a 200 pf capacitor through a 0 w series resistor. thermal resistance symbol parameter min. max. unit v p supply voltage - 0.3 + 12 v i p supply current - 21 ma t stg storage temperature - 55 + 125 c t amb operating ambient temperature - 40 + 85 c p tot total power dissipation - 252 mw v esd electrostatic handling for all pins (note 1) - 300 v symbol parameter thermal resistance r th j-a from junction to ambient in free air 65 k/w
july 1994 8 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 dc characteristics v p = 8.5 v; t amb = + 25 c; all voltages referenced to ground unless otherwise speci?ed. symbol parameter min. typ. max. unit v p supply voltage 7 8.5 10 v i p supply current (TEA6850 enable) 14 17.5 21 ma i p supply current (TEA6850 disable) 320 400 480 m a v 1 voltage at pin 1 2.1 2.4 2.7 v v 2 voltage at pin 2 tbn tbn tbn v v 3 voltage at pin 3 3.3 3.55 3.8 v v 4 voltage at pin 4 3.3 3.55 3.8 v v 5 voltage at pin 5 tbn tbn tbn v v 6 voltage at pin 6 2.1 2.3 2.5 v v 12 voltage at pin 12 0.98 1.08 1.18 v v 13 voltage at pin 13 tbn tbn tbn v v 14 voltage at pin 14 1.8 2 2.2 v v 15 voltage at pin 15 1.8 2 2.2 v v 16 voltage at pin 16 tbn tbn tbn v v 18 voltage at pin 18 3.0 3.3 3.6 v v 21 voltage at pin 21 3.2 3.5 3.8 v v 22 voltage at pin 22 3.2 3.5 3.8 v v 23 voltage at pin 23 3.9 4.2 4.5 v v 24 voltage at pin 24 3.9 4.2 4.5 v v 25 voltage at pin 25 3.9 4.2 4.5 v v 26 voltage at pin 26 3.9 4.2 4.5 v v 27 voltage at pin 27 3.9 4.2 4.5 v v 28 voltage at pin 28 3.9 4.2 4.5 v v 29 voltage at pin 29 3.9 4.2 4.5 v v 30 voltage at pin 30 3.9 4.2 4.5 v v 31 voltage at pin 31 tbn tbn tbn v v 32 voltage at pin 32 tbn tbn tbn v v 33 voltage at pin 33 4.1 4.4 4.7 v v 34 voltage at pin 34 2.7 2.9 3.3 v v 35 voltage at pin 35 2.1 2.4 2.7 v v 36 voltage at pin 36 4.2 4.4 4.6 v v 37 voltage at pin 37 4.2 4.4 4.6 v v 38 voltage at pin 38 2.1 2.4 2.7 v v 39 voltage at pin 39 2.1 2.4 2.7 v v 40 voltage at pin 40 2.1 2.4 2.7 v v 41 voltage at pin 41 2.1 2.4 2.7 v v 42 voltage at pin 42 1.6 1.75 1.9 v v 43 voltage at pin 43 1.6 1.75 1.9 v v 44 voltage at pin 44 1.6 1.75 1.9 v
july 1994 9 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 ac characteristics v p = 8.5 v; t amb = + 25 c; f = 10.7 mhz with f m = 1 khz, 22.5 khz deviaton ( d f = 22.5 khz); emf = 30 mv rms; 50 m s de-emphasis; ?lter bandwidth = 50 khz overall; - 6 db gain from emf to if ?lter output (pins 21 and 22); in noise frequency band for s/n measurements 300 hz to 15 khz; s/n stereo measurement with ideal decoder; measurements taken in fig.4 unless otherwise speci?ed. reference voltage source v 9 voltage at pin 9 2.4 2.55 2.7 v v 10 voltage at pin 10 2.95 3.25 3.55 v v 11 voltage at pin 11 0.98 1.08 1.2 v tk temperature coef?cient of v 10 and v 11 - 3.3 - 10 - 3 /k symbol parameter conditions min. typ. max. unit ds100 dynamic selectivity for 100 khz emf = 700 m v1316 - db distance emf = 14 mv 10 12 - db ds200 dynamic selectivity for 200 khz emf = 700 m v2227 - db distance emf = 14 mv 18 22 - db s/n signal-to-noise ratio mono 61 67 - db stereo 54 57 - db emf if signal s/n = 26 db; v 5 = 5 v - 20 45 m v s/n = 46 db; v 5 = 5 v - 130 370 m v emf input voltage for start of limiting - 3 db at mpx output; - 10 20 m v (rms value) v 5 = 5v thd total harmonic distortion d f = 75 khz - 0.3 0.5 % d f = 100 khz - 0.5 1 % f m = 8 khz; d f = 75 khz - 35% d 57 attenuation of third harmonic f m = 19 khz; d f = 6.75 khz; 14 20 - db measured at pin 4 measured at 57 khz compared to 57 khz d f = 2 khz emf admissible maximum input voltage 300 -- mv (rms value) a 14-21,22 gain to if ?lter output (adjustable) -- 6 - db d a dc downconverter adjustable range - 10 -+ 6db v o mpx output voltage (rms value) 180 200 220 mv d v o mpx output voltage ripple 1 khz < f mod < 15 khz -- 2db 23 khz < f mod < 53 khz -- 2db symbol parameter min. typ. max. unit
july 1994 10 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 rr power supply ripple rejection f = 200 hz to 20 khz; 38 -- db v rmax = 100 mv (on v p ); ripple at mpx output a am am suppression f mod = 400 hz; - 50 - db modulation = 30% 500 m v < emf < 100 mv 40 44 - db rds output (pin 1) z o output impedance -- 1k w r l load resistance 15 -- k w c l load capacitance -- 50 pf v 1 rds signal output voltage f mod = 57 khz; d f = 2 khz; 4 6 - mv r l = ; c l = 0 t switch switch on time -- 500 ms 10.7 mhz input (pins 14 and 15) r i input resistance 3.5 5 6.5 k w c i input capacitance -- 5pf v 14 residual oscillator signal f osc /2 = 11 mhz; r g = 300 w- - 30 m v crystal f 0 standard frequency - 22 - mhz d f 0 /f 0 frequency tolerance - 100 -+ 100 ppm c 0 shunt capacitance -- 7pf r s equivalent series resistance -- 120 w d t 0 /t 0 temperature drift - 40 c < t < +85 c - 50 - + 50 ppm oscillator (measured at pin 18) v 18 22 mhz output level 13 20 40 mv out300q, i output (pins 21 and 22; r out300 = 33 k w ; see fig.4) v 21,22 output voltage emf = 75 mv 7 12 14 mv |v 21 | - |v 22 | i, q output level difference -- 1.5 mv tc temperature coef?cient of - 3.3 - 10 - 3 /k output voltage z o output impedance - 1.26 - k w turnable ?lter ( - 40 c july 1994 11 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 level ampli?er (pin 5; typical curve and adjusting range see fig.7) z o output impedance 8 10 12 k w tc temperature coef?cient of - 3.3 - 10 - 3 /k output voltage v 5 output voltage a = - 3 db for emf = 200 m v; 2.1 2.35 2.6 v emf = 100 m v emf = 1 mv 2.95 3.3 3.65 v s slope of output voltage 100 m v < emf < 10 mv - 950 - mv/20 db v 5 level shift adjustment range emf = 0 0.5 1.0 1.5 v soft mute (typical curves see fig.8) level dependence emf start of mute ( a = - 3 db) for - 200 -m v if input (rms value) emf - 3 db adjustment range for if input 100 - 300 m v s m mute slope at - 15 db 29 32 35 db/dec v mpx /v mpx0 muting depth emf < 5 m v; a = - 3 db for - 35 - 32 - 29 db emf = 200 m v i 32 charge current v 5 = 4.5 v; v 32 = 3.9 v 10 13 17 m a discharge current v 5 = 4.5 v; v 32 = 5.1 v 20 26 34 m a t mute time constant from unmuted to 0.75 1 1.3 ms muted t unmute time constant from muted to 1.5 2 2.6 ms unmuted high-pass dependence (see fig.9) v mpx /v mpx0 muting depth - 12 - 10 - 8db v 1 voltage at pin 1 (rms value) f = 60 khz; 165 185 205 mv v mpx /v mpx0 = - 3 db i 34 charge current v 34 = 0 v 140 200 260 m a discharge current v 34 = 5 v 0.7 1 3 m a d v 4 residual dc offset at mpx output emf < 80 m v -- 60 mv 80 m v < emf < 2 mv -- 60 mv mpx output (pin 4) r o output resistance -- 100 w r l load resistance v 4 1 v 3 -- k w c l load capacitance -- 50 pf v 4 clipping dc voltage 1.5 - 7v v 4 residual signal of 300 khz and -- 10 mv higher harmonics (rms value) symbol parameter conditions min. typ. max. unit
july 1994 12 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 cenable (pin 2) v 2 voltage range chip enable - 0.3 + 0.6 + 1.1 v chip disable 1.9 2.4 5.5 v r i input resistance 100 -- k w source selector isolation (f < 12.5 khz; mode TEA6850 signal: v 6 > 1.9 v or pin not connected; mode external signal: v 6 < 1.1 v) v mpx /v mpxin isolation of external signal mode TEA6850 signal; - 70 - 80 - db d f = 0; v mpxin = 200 mv; f = 12.5 khz v mpx /v mpx0 isolation of TEA6850 signal mode external signal; - 70 - 80 - db d f = 22.5 khz; r g (pin 3) < 10 k w ; f mod = 12.5 khz r i input resistance at pin 6 v 6 > 1.9 v 1 -- m w v 6 < 1.1 v 3 -- k w input resistance at pin 3 23 30 37 k w i 6 input current v sselect < 1.1 v -- 20 m a symbol parameter conditions min. typ. max. unit
july 1994 13 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here in this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force land scape pages to be ... fig.4 test circuit.
july 1994 14 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 fig.5 if filter frequency response. fig.6 high-pass frequency response (see fig.1).
july 1994 15 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 fig.7 levelamp output voltage. fig.8 soft mute curve.
july 1994 16 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 fig.9 high-pass mute curve. fig.10 temperature dependence of a - 3 db and thd.
july 1994 17 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 appendix alignment procedure for the test circuit (see fig.4) 1. connect a spectrum analyser to pin 21 or pin 22. set centre frequency to 300 khz and frequency span from 200 khz to 400 khz. 2. set frequency of rf-generator to 10.7 mhz, emf-level to 4 mv rms, modulation frequency to 1 khz and frequency deviation to 75 khz. 3. turn poti p7 in the mid position. align centre frequency of the tunable if-filter with poti p5. the alignment is correct, if the spectrum measured at pin 21 is symmetric. 4. set frequency deviation of rf-generator to zero (emf = 4 mv rms). align the downconverter gain with poti p1. the alignment is correct, if the level at pin 21 is 2 mv rms. 5. short pin 36 and pin 37. set frequency of rf-generator to 10.6 mhz respectively 10.8 mhz (emf = 4 mv rms, d f = 0). align bandwidth of the tunable if-filter with poti p7. the alignment is correct, if the level measured at 200 khz respectively 400 khz is 21 db below the maximum. remove the short. 6. set frequency of the rf-generator to 10.7 mhz, emf-level to 20 mv rms, modulation frequency to 1 khz and frequency deviation to 22.5 khz. measure level of the 1 khz signal at pin 4. set the emf-level to 200 m v. align start of mute ( a - 3 db) with poti p2. 7. set emf-level back to 20 mv rms and vary the modulation frequency. align mpx output voltage ripple (see d v o in the ac characteristics) with poti p6.
july 1994 18 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 package outline unit a 1 a 2 a 3 b p ce (1) eh e ll p z y w v q references outline version european projection issue date iec jedec eiaj mm 0.25 0.05 1.85 1.65 0.25 0.40 0.20 0.25 0.14 10.1 9.9 0.8 1.3 12.9 12.3 1.2 0.8 10 0 o o 0.15 0.1 0.15 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.95 0.55 sot307-2 95-02-04 97-08-01 d (1) (1) (1) 10.1 9.9 h d 12.9 12.3 e z 1.2 0.8 d e e b 11 c e h d z d a z e e v m a x 1 44 34 33 23 22 12 y q a 1 a l p detail x l (a ) 3 a 2 pin 1 index d h v m b b p b p w m w m 0 2.5 5 mm scale qfp44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm sot307-2 a max. 2.10
july 1994 19 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all qfp packages. the choice of heating method may be influenced by larger plastic qfp packages (44 leads, or more). if infrared or vapour phase heating is used and the large packages are not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture in them can cause cracking of the plastic body. for more information, refer to the drypack chapter in our quality reference handbook (order code 9397 750 00192). reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering is not recommended for qfp packages. this is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. if wave soldering cannot be avoided, the following conditions must be observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. even with these conditions, do not consider wave soldering the following packages: qfp52 (sot379-1), qfp100 (sot317-1), qfp100 (sot317-2), qfp100 (sot382-1) or qfp160 (sot322-1). during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
july 1994 20 philips semiconductors preliminary speci?cation if ?lter / ampli?er / demodulator for fm radio receivers TEA6850 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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